NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 5

• Manufacturer Part Number: NTMD4184PFR2G
• Description: MOSFET P-CH 30V 2.3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4184PFR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 770mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
1000
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.0000001
0.0000001
0.1
0.2
0.1
0.05
0.02
0.02
0.01
0.5
0.01
0.05
0.5
0.2
T
0.1
Single Pulse
Single Pulse
J
V
= 85°C
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.3
Figure 13. Typical Forward Voltage
0.000001
0.000001
T
0.5
J
= -55°C
T
Figure 12. Thermal Response - R
J
0.00001
= 125°C
0.00001
Figure 11. Thermal Response - R
T
0.7
J
= 25°C
0.9
0.0001
0.0001
1.1
TYPICAL CHARACTERISTICS
1.3
0.001
0.001
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PULSE TIME (sec)
PULSE TIME (sec)
NTMD4184PF
1.5
qJA
5
0.01
0.01
qJA
at Steady State (1 inch sq pad)
100
0.1
at Steady State (min pad)
10
V
1
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
T
J
0.1
0.1
= 85°C
Figure 14. Maximum Forward Voltage
0.3
T
J
0.5
= 125°C
1
1
0.7
T
J
10
10
= 25°C
0.9
1.1
100
100
1.3
1000
1000
1.5