NTD4854N-1G ON Semiconductor, NTD4854N-1G Datasheet - Page 6

• Manufacturer Part Number: NTD4854N-1G
• Description: MOSFET N-CH 25V 15.7A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4854N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4600pf @ 12V
• Power - Max: 1.43W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4854NT4G
NTD4854N--1G
NTD4854N--35G
0.01
1.0
0.1
1.0E--05
0.02
D = 0.5
0.05
0.1
0.2
SINGLE PULSE
Device
0.01
1.0E--04
TYPICAL PERFORMANCE CURVES
1.0E--03
Figure 13. Thermal Response
http://onsemi.com
IPAK Trimmed Lead
(3.5  0.15 mm)
t, TIME (ms)
(Pb--Free)
(Pb--Free)
(Pb--Free)
Package
DPAK
P
IPAK
6
(pk)
1.0E--02
DUTY CYCLE, D = t
t
1
t
2
1.0E--01
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
(t) = r(t) R
-- T
C
2500 / Tape & Reel
= P
75 Units / Rail
75 Units / Rail
θJC
(pk)
1.0E+00
Shipping
1
R
θJC
(t)
†
1.0E+01