NTD4854N-1G ON Semiconductor, NTD4854N-1G Datasheet - Page 4

• Manufacturer Part Number: NTD4854N-1G
• Description: MOSFET N-CH 25V 15.7A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4854N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4600pf @ 12V
• Power - Max: 1.43W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
160
140
120
100
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
--50
10 V
2
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
V
= 30 A
--25
DS
V
Figure 1. On- -Region Characteristics
3
Figure 5. On- -Resistance Variation with
= 10 V
GS
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
3.8 V
25
5
2
Temperature
50
Voltage
6
T
J
= 25°C
75
7
3
TYPICAL PERFORMANCE CURVES
100
8
125
9
4
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
10
5
175
11
4
100000
0.0045
0.0035
0.0025
10000
0.005
0.004
0.003
0.002
1000
100
200
180
160
140
120
100
80
60
40
20
10
1
0
30
5
1
Figure 4. On- -Resistance vs. Drain Current and
T
V
Figure 6. Drain- -to- -Source Leakage Current
V
T
J
DS
GS
J
V
= 25°C
V
50
DS
= 25°C
≥ 10 V
T
GS
= 0 V
J
Figure 2. Transfer Characteristics
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
= 125°C
70
10
I
2
D
, DRAIN CURRENT (AMPS)
vs. Drain Voltage
90
Gate Voltage
V
V
T
T
T
T
GS
GS
J
J
J
J
= 125°C
= 150°C
= 25°C
= --55°C
110
= 11.5 V
15
= 4.5 V
3
130
150
20
4
170
190
25
5