NTD4815NH-35G ON Semiconductor, NTD4815NH-35G Datasheet - Page 5

• Manufacturer Part Number: NTD4815NH-35G
• Description: MOSFET N-CH 30V 6.9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4815NH-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 845pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
100
1200
1000
10
10
0.1
800
600
400
200
1
1
0
1
0.1
0
V
I
V
D
DD
GS
Figure 11. Maximum Rated Forward Biased
V
= 30 A
C
GS
V
C
rss
= 15 V
= 11.5 V
DS
t
iss
C
t
d(on)
= 0 V
Figure 9. Resistive Switching Time
d(off)
V
SINGLE PULSE
T
oss
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
C
GS
DRAIN--TO--SOURCE VOLTAGE (VOLTS)
t
5
t
f
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
R
= 25°C
G
= 20 V
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
Safe Operating Area
1
10
LIMIT
10
15
10
TYPICAL PERFORMANCE CURVES
20
T
J
25
10 ms
1 ms
10 ms
100 ms
dc
= 25°C
http://onsemi.com
100
100
30
5
15
12
9
6
3
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
0
35
30
25
20
15
10
40
35
30
25
20
15
10
V
5
0
0.3
5
0
25
DS
Q
1
2
Figure 10. Diode Forward Voltage vs. Current
V
Figure 12. Maximum Avalanche Energy vs.
T
GS
J
0.4
V
= 25°C
Q
SD
4
= 0 V
Q
50
2
Voltage vs. Total Charge
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
G
Starting Junction Temperature
T
, TOTAL GATE CHARGE (nC)
0.5
J
6
, JUNCTION TEMPERATURE (°C)
Q
T
0.6
75
8
10
0.7
100
12
0.8
14
125
0.9
V
16
I
T
GS
D
J
1.0
= 30 A
I
= 25°C
D
150
18
= 15.4 A
1.1
20
25
20
15
10
5
175
0
1.2