NTD4815NH-35G ON Semiconductor, NTD4815NH-35G Datasheet

MOSFET N-CH 30V 6.9A IPAK

NTD4815NH-35G

Manufacturer Part Number
NTD4815NH-35G
Description
MOSFET N-CH 30V 6.9A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4815NH-35G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
6.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
845pF @ 12V
Power - Max
1.26W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4815NH-35G
Manufacturer:
ON Semiconductor
Quantity:
185
NTD4815NH
Power MOSFET
30 V, 35 A, Single N- -Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
June, 2010 - - Rev. 3
MAXIMUM RATINGS
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low R
These are Pb- -Free Devices
CPU Power Delivery
DC- -DC Converters
High Side Switching
θJA
θJA
θJC
= 15.4 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
G
θJA
θJA
θJC
DD
pk
, L = 0.3 mH, R
= 24 V, V
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
= 10 V,
J
G
= 25°C unless otherwise stated)
= 25 Ω)
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
STG
T
DSS
ID
DM
I
I
I
GS
D
D
S
J
D
D
D
L
,
Value
--55 to
+175
1.92
1.26
32.6
35.6
±20
260
8.5
6.5
6.9
5.3
30
35
27
87
35
27
6
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 369AA
1
(Bent Lead)
V
1 2
STYLE 2
Drain
Drain 3
(BR)DSS
30 V
DPAK
4
2
Source
3
ORDERING INFORMATION
G
Y
WW
4815NH= Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
N- -CHANNEL MOSFET
http://onsemi.com
Gate
27.7 mΩ @ 4.5 V
(Straight Lead)
15 mΩ @ 10 V
R
CASE 369AC
1
= Year
= Work Week
= Pb--Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
4
3
MAX
Source
S
Gate
(Straight Lead
NTD4815NH/D
CASE 369D
1
1
DPAK)
Drain
Drain
I
2
IPAK
D
35 A
3
4
2
MAX
3
Source
4

Related parts for NTD4815NH-35G

NTD4815NH-35G Summary of contents

Page 1

... IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS Drain Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4815NH= Device Code G = Pb--Free Package ORDERING INFORMATION Publication Order Number: NTD4815NH/D 4 ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad Cu. 2. Surface--mounted on FR4 board using the ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time DRAIN- -SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

DRAIN--TO--SOURCE VOLTAGE (VOLTS) DS Figure 1. On- -Region Characteristics 0.04 0.03 0.02 0. ...

Page 5

1000 C iss 800 600 400 C oss 200 C rss DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...

Page 6

... ORDERING INFORMATION Device NTD4815NHT4G NTD4815NH--1G NTD4815NH--35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 25°C 100°C 125° ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ° SOLDERING FOOTPRINT* 6 ...

Page 8

... R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 ------ 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4815NH/D ...

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