NTD4815NH-1G ON Semiconductor, NTD4815NH-1G Datasheet - Page 2

• Manufacturer Part Number: NTD4815NH-1G
• Description: MOSFET N-CH 30V 6.9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4815NH-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 845pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain--to--Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
G(TOT)
d(ON)
GS(TH)
C
G(TOT)
Q
Q
GSS
DS(on)
DSS
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
/
http://onsemi.com
J
V
V
GS
GS
V
V
V
V
V
GS
V
= 0 V, f = 1.0 MHz, V
= 4.5 V, V
V
2
DS
GS
V
GS
V
GS
GS
I
DS
11.5 V
V
D
GS
GS
= 10 V to
DS
= 24 V
= 4.5 V
= 11.5 V, V
= 15 A, R
= 0 V,
= 4.5 V, V
Test Condition
= 0 V, V
= V
= 0 V, I
= 15 V, I
I
D
DS
DS
= 30 A
, I
D
GS
= 15 V; I
D
G
DS
= 250 mA
D
DS
= 250 mA
= 3.0 Ω
= ±20 V
= 10 A
= 15 V,
= 15 V;
T
T
I
J
I
I
I
D
J
D
D
D
DS
= 125°C
D
= 25 °C
= 15 A
= 30 A
= 15 A
= 20 A
= 30 A
= 12 V
R
Symbol
θJC--TAB
R
R
R
θJC
θJA
θJA
Min
30
1.5
20.1
15.2
17.6
11.3
Typ
21.5
11.5
845
183
103
2.8
25
5.6
6.0
6.4
1.5
2.9
2.7
11
12
Value
119
4.6
3.5
78
±100
Max
27.7
10
2.5
6.8
15
1
mV/°C
mV/°C
°C/W
Unit
Unit
mΩ
mA
nA
nC
ns
nC
pF
V
V
S