NTR4502PT3 ON Semiconductor, NTR4502PT3 Datasheet

NTR4502PT3

Manufacturer Part Number

NTR4502PT3

Description

MOSFET P-CH 30V 1.13A SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.NTR4502PT3G.pdf (5 pages)

Specifications of NTR4502PT3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

200 mOhm @ 1.95A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.13A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

200pF @ 15V

Power - Max

400mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTR4502PT3G

Manufacturer:

ONSemico

Quantity:

45 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTR4502PT3G

Manufacturer:

Quantity:

30 000

Current page: 1 of 5
Download datasheet (131Kb)

NTR4502P

Power MOSFET

−30 V, −1.95 A, Single, P−Channel,

SOT−23

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

April, 2009 − Rev. 4

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t = 10 s (Note 1)

Leading Planar Technology for Low Gate Charge / Fast Switching

Low R

SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

Pb−Free Packages are Available

DC to DC Conversion

Load/Power Switch for Portables and Computing

Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.

Battery Charging Circuits

(Cu area = 1.127 in sq. [1 oz] including traces).

DS(ON)

for Low Conduction Losses

Parameter

t < 10 s

= 25°C unless otherwise stated)

Steady

State

Steady State

t < 10 s

= 10 ms

= 25°C

= 70°C

= 25°C

= 70°C

Symbol

DSS

STG

qJA

−55 to

Value

−1.95

−1.56

−1.13

−0.90

−1.25

1.25

−6.8

Max

−30

±20

150

260

300

100

0.4

°C/W

Unit

°C

†For information on tape and reel specifications,

NTR4502PT1

NTR4502PT1G

NTR4502PT3

NTR4502PT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−30 V

*Date Code orientation and/or overbar may

Device

vary depending upon manufacturing location.

CASE 318

STYLE 21

(Note: Microdot may be in either location)

SOT−23

ORDERING INFORMATION

TR2

240 mW @ −4.5 V

155 mW @ −10 V

http://onsemi.com

P−Channel MOSFET

DS(on)

(Pb−Free)

Package

= Device Code

= Date Code*

= Pb−Free Package

SOT−23

TYP

Publication Order Number:

MARKING DIAGRAM/

PIN ASSIGNMENT

Gate

10000 / Tape & Reel

3000 / Tape & Reel

TR2 M G

Drain

Shipping†

Max (Note 1)

NTR4502P/D

−1.95 A

Source

Related parts for NTR4502PT3

NTR4502PT3 Summary of contents

Page 1

... NTR4502PT1 Symbol Max Unit NTR4502PT1G R 300 °C/W qJA 100 R qJA NTR4502PT3 NTR4502PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I Max (Note 1) DS(on) D 155 mW @ −10 V − ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise specified) J Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance ...

Page 3

V = −4 −5 −7 − −3 −2 ...

Page 4

V = − −1. − d(off d(on ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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