NTR4501 ON Semiconductor, NTR4501 Datasheet
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NTR4501
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NTR4501 Summary of contents
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... R 100 qJA vary depending upon manufacturing location. R 300 qJA Device NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on) ...
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... SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTR4501N Symbol Test Condition = 250 (BR)DSS ...
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... DRAIN CURRENT (AMPS) D Figure 3. On−Resistance versus Gate−to−Source Voltage 1 1.0 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTR4501N 7.0 ≥ 25°C J 6.0 5.0 4.0 3.0 2 55° GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...
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... 3 4 d(off d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance NTR4501N 5 25° 3.0 iss Q 2.0 GS oss 1.0 rss 0.5 Drain−to−Source Voltage versus Total ...
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... L1 H 2.10 2.40 2.64 0.083 0.094 E STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4501N/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...