NTD50N03R-1G ON Semiconductor, NTD50N03R-1G Datasheet - Page 8

MOSFET N-CH 25V 7.8A IPAK

NTD50N03R-1G

Manufacturer Part Number
NTD50N03R-1G
Description
MOSFET N-CH 25V 7.8A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD50N03R-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 30A, 11.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 11.5V
Input Capacitance (ciss) @ Vds
750pF @ 12V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
45 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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SEATING PLANE
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
V
W
F
G
B
R
A
K
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
D
3 IPAK, STRAIGHT LEAD
3 PL
0.13 (0.005) W
http://onsemi.com
CASE 369AC−01
NTD50N03R
J
ISSUE O
H
8
C
E
NOTES:
1.. DIMENSIONING AND TOLERANCING
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
4. DIMENSION A DOES NOT INCLUDE
PER ANSI Y14.5M, 1982.
DAMBAR POSITION.
DAMBAR POSITION OR MOLD GATE.
DIM
W
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
A
B
C
D
E
F
G
H
K
R
V
J
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.134
0.180
0.035
0.000
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.043
0.040
0.023
0.142
0.215
0.050
0.010
MAX
0.000
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
3.40
4.57
0.89
MIN
2.29 BSC
NTD50N03R/D
MAX
6.22
6.73
2.38
0.88
0.58
1.09
1.01
0.58
3.60
5.46
1.27
0.25

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