NTD50N03R-1G ON Semiconductor, NTD50N03R-1G Datasheet - Page 3

• Manufacturer Part Number: NTD50N03R-1G
• Description: MOSFET N-CH 25V 7.8A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD50N03R-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 11.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 12V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6. Switching characteristics are independent of operating junction temperatures.
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(continued) (T
Symbol
t
t
t
t
Q
V
d(on)
d(off)
d(on)
d(off)
t
R
L
L
L
RR
t
t
t
t
t
t
SD
RR
a
b
G
r
f
r
f
S
D
G
J
http://onsemi.com
= 25°C unless otherwise noted)
NTD50N03R
V
V
GS
V
V
I
GS
S
GS
GS
I
I
D
D
= 0 V, dI
= 30 A
3
= 30 A, R
= 11.5 V, V
= 30 A, R
Test Condition
= 0 V,
= 4.5 V, V
I
Ta = 25C
S
= 30 A
S
/dt = 100 A/ms,
G
G
DS
T
DS
= 3.0 W
= 3.0 W
T
J
J
= 15 V,
= 125°C
= 15 V,
= 25°C
Min
0.85
0.71
10.5
2.49
0.02
3.46
3.75
11.2
Typ
8.2
9.6
6.8
5.0
4.0
84
15
24
14
14
Max
1.1
Unit
nC
nH
ns
ns
ns
V
W