NTD3055-150-1G ON Semiconductor, NTD3055-150-1G Datasheet - Page 4

• Manufacturer Part Number: NTD3055-150-1G
• Description: MOSFET N-CH 60V 9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055-150-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 28.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

560
480
400
320
240
160
100
100
80
0.1
10
10
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
10
0.1
1
C
C
V
SINGLE PULSE
T
Figure 9. Resistive Switching Time Variation
iss
rss
V
I
V
Figure 11. Maximum Rated Forward Biased
C
GS
D
V
DS
GS
V
DS
= 25°C
= 9 A
5
DS
= 20 V
= 30 V
= 10 V
= 0 V
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
R
versus Gate Resistance
0
G
Safe Operating Area
V
V
, GATE RESISTANCE (W)
R
THERMAL LIMIT
PACKAGE LIMIT
100 ms
GS
DS
10 ms
1 ms
1
DS(on)
= 0 V
5
LIMIT
C
rss
10
10
t
d(off)
t
t
r
f
t
d(on)
10
15
C
C
oss
T
iss
J
= 25°C
10 ms
20
dc
http://onsemi.com
25
100
100
4
12
10
10
32
24
16
8
6
4
2
0
8
6
4
2
0
8
0
0
0.6
25
Figure 12. Maximum Avalanche Energy versus
Drain−to−Source Voltage versus Total Charge
V
T
Figure 10. Diode Forward Voltage versus
T
V
Q
GS
J
J
SD
1
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
1
= 0 V
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.68
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
2
g
, TOTAL GATE CHARGE (nC)
75
3
0.76
Q
Q
Current
T
2
100
4
0.84
5
125
6
I
D
0.92
I
T
= 7.75 A
D
V
150
J
GS
= 9 A
= 25°C
7
175
8
1