NTB25P06 ON Semiconductor, NTB25P06 Datasheet - Page 5

• Manufacturer Part Number: NTB25P06
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB25P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
SEATING
PLANE
−T−
F
1
1
G
−B−
4
2
L
3
D
0.13 (0.005)
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
3 PL
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
S
R
VIEW W−W
M
F
T
2
PACKAGE DIMENSIONS
B
8.38
0.33
SOLDERING FOOTPRINT*
M
N
K
http://onsemi.com
CASE 418B−04
L
NTB25P06
C
17.02
ISSUE J
0.67
H
D
2
PAK
5
A
E
M
J
U
V
W
W
VIEW W−W
3.05
0.12
F
3
SCALE 3:1
1.016
0.04
P
L
inches
5.08
0.20
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
DIM
A
B
C
D
G
H
K
M
N
R
E
F
J
L
P
S
V
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.110
0.025
0.110
0.072
0.320
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
7.11
1.14
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40