NTB25P06 ON Semiconductor, NTB25P06 Datasheet
NTB25P06
Specifications of NTB25P06
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NTB25P06 Summary of contents
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... MAX DS(on) D −27 −10 V P−Channel MARKING DIAGRAM & PIN ASSIGNMENT Drain 4 NTB 25P06G AYWW 2 PAK Drain Gate Source NTB25P06 = Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION † Package Shipping 2 D PAK 50 Units/Rail 2 D PAK 50 Units/Rail (Pb− ...
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... BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage (I = − Reverse Recovery Time Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NTB25P06 (T = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS ...
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... Figure 3. On−Resistance vs. Drain Current and Temperature 1. − − 1.5 1.25 1 0.75 0.5 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTB25P06 25°C ≥ − −6 V −5 − −4.5 V −4 −V , GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics ...
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... V = − SINGLE PULSE T = 25°C C 100 Limit DS(on) Thermal Limit Package Limit 0.1 0.1 1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTB25P06 25° iss 4 C oss 2 rss Drain−to−Source Voltage vs. Total Charge 25 V ...
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... PL 0.13 (0.005) M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB25P06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...
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... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTB25P06/D ...