IPD144N06N G Infineon Technologies, IPD144N06N G Datasheet - Page 7

• Manufacturer Part Number: IPD144N06N G
• Description: MOSFET N-CH 60V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD144N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 80µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 30V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD144N06N G; IPD144N06NGINTR; IPD144N06NGXT; SP000203941

Rev.1.22
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
75
70
65
60
55
50
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25
D
=1 mA
150 °C
10
20
t
T
100 °C
AV
j
60
[°C]
[µs]
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=50 A pulsed
g s
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
30
g d
12 V
IPD144N06N G
30 V
40
48 V
Q
g ate
2008-07-22
50