IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 8

• Manufacturer Part Number: IPB04N03LA G
• Description: MOSFET N-CH 25V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB04N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 60µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 3877pF @ 15V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB04N03LA G; IPB04N03LAGINTR; IPB04N03LAGXT; SP000103302

IPB04N03LA G
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
Footprint
Packaging
Rev. 1.7
page 8
2006-05-10