SPI70N10L Infineon Technologies, SPI70N10L Datasheet - Page 6

• Manufacturer Part Number: SPI70N10L
• Description: MOSFET N-CH 100V 70A I2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPI70N10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000014005

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
pF
10
10
10
110
90
80
70
60
50
40
30
20
10
0
-60
4
3
2
0
DS
SPP70N10L
= f (T
)
5
-20
D
GS
j
)
= 50 A, V
10
=0V, f=1 MHz
20
15
98%
60
typ
GS
20
= 4.5 V
100
25
30
140
°C
V
T
V
C
C
C
j
DS
iss
oss
rss
200
40
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
V
3
2
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPP70N10L
)
0.4
-20
GS
p
0.8
= V
= 80 µs
20
SPP70N10L,SPB70N10L
DS ,
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
I
D
1.6
= 2 mA
100
2
2005-01-12
SPI70N10L
140
2.4
°C
T
V
V
j
SD
max
typ
min
200
3