SPB80N06S2L-H5 Infineon Technologies, SPB80N06S2L-H5 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2L-H5
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-H5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 230µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 6640pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013796; SPB80N06S2LH5T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-H5
GS
P
tot
); T
i
); V
= 300W
p
p
h
1
= 80 µs
= 80 µs
j
=25°C
g
DS
1
≥ 2 x I
2
f
D
2
x R
3
DS(on)max
e
c
a
4
V
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
V
V
V
DS
GS
3.0
3.2
3.5
3.8
4.0
4.2
5.0
6.0
7.0
5.5
4
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
200
160
140
120
100
S
16
12
10
80
60
40
20
8
6
4
2
0
0
0
0
D
SPP80N06S2L-H5
= f (I
V
); T
GS
d
3.8
d
20
[V] =
20
4.0
j
e
=25°C
D
fs
GS
)
40
4.2
f
40
g
5.0
60
60
6.0
h
SPB80N06S2L-H5
80
SPP80N06S2L-H5
7.0
i
80
e
100 120 140
100
2003-05-09
120
A
i
A
I
I
D
D
h
f
g
180
160