SPB80N06S2-07 Infineon Technologies, SPB80N06S2-07 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2-07
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 68A, 10v
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 180µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013578; SPB80N06S207T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2-07
GS
P
tot
); T
); V
= 250W
p
p
1
h
1
= 80 µs
= 80 µs
j
=25°C
DS
≥ 2 x I
2
2
D
3
x R
3
DS(on)max
4
g
e
c
a
4
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
V
V
V
V
DS
GS
10.0
3.8
4.0
4.2
4.5
4.8
5.0
5.3
5.5
6
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
120
100
S
21
18
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
= f (I
V
); T
GS
4.2
c
c
[V] =
20
20
j
4.5
d
=25°C
D
fs
GS
)
4.8
e
40
40
d
5.0
f
60
g
5.3
60
e
10.0
h
80
80
SPI80N06S2-07
100
f
100
2003-05-09
120
A
g
I
h
A
D
I
D
140
150