SPB80N03S2L-03 Infineon Technologies, SPB80N03S2L-03 Datasheet - Page 5

• Manufacturer Part Number: SPB80N03S2L-03
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N03S2L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 8180pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016252; SPB80N03S2L03T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
320
240
200
160
120
A
A
80
60
40
20
80
40
0
0
0
0
DS
SPP80N03S2L-03
GS
P
i
0.5
0.5
tot
); T
h
); V
= 300W
p
p
g
f
= 80 µs
= 80 µs
1
1
j
=25°C
DS
1.5
1.5
≥ 2 x I
2
2
D
2.5
2.5
x R
3
DS(on)max
3
3.5
3.5
e
c
a
d
b
V GS [V]
4
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
GS
10.0
2.5
2.8
3.0
3.3
3.5
3.8
4.0
4.5
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
250
200
175
150
125
100
S
11
75
50
25
SPP80N03S2L-03,SPB80N03S2L-03
9
8
7
6
5
4
3
2
1
0
0
0
0
D
SPP80N03S2L-03
= f (I
V
); T
GS
3.3
d
20
[V] =
20
j
3.5
e
=25°C
D
fs
GS
40
)
3.8
f
40
60
g
4.0
60
80 100 120 140 160
4.5
h
10.0
80
d
i
SPI80N03S2L-03
100
2003-05-09
120
e
A
I
h
D
I
A
D
f
i
g
160
200