IPP80N06S3L-08 Infineon Technologies, IPP80N06S3L-08 Datasheet - Page 7

• Manufacturer Part Number: IPP80N06S3L-08
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 55µA
• Gate Charge (qg) @ Vgs: 134nC @ 10V
• Input Capacitance (ciss) @ Vds: 6475pF @ 25V
• Power - Max: 105W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.9 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 105 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L-08; IPP80N06S3L-08IN; IPP80N06S3L08X; IPP80N06S3L08XK; SP000088127

Rev. 1.1
13 Typical avalanche Energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
12
10
600
500
400
300
200
100
8
6
4
2
0
0
0
j
)
gate
0
40 A
80 A
20 A
D
); I
DD
D
= 80 A pulsed
50
50
Q
gate
T
100
j
[°C]
[nC]
11 V
100
150
44 V
200
150
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
66
64
62
60
58
56
54
52
50
48
46
GS
GS
-60
= f(T
Q
Q
j
gs
gs
IPI80N06S3L-08, IPP80N06S3L-08
); I
-20
D
= 1 mA
20
Q
Q
g
g
T
Q
Q
j
60
gd
gd
[°C]
IPB80N06S3L-08
100
Q
Q
140
gate
gate
2007-11-07
180