IPP80N06S3L-06 Infineon Technologies, IPP80N06S3L-06 Datasheet - Page 9

• Manufacturer Part Number: IPP80N06S3L-06
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 80µA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 9417pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L06X; IPP80N06S3L06XK; SP000088006

Rev. 1.1
Revision History
Version
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Date
page 9
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
07.11.2007
07.11.2007
07.11.2007
07.11.2007
IPI80N06S3L-06, IPP80N06S3L-06
Changes
Removal of ordering code
Update of Infineon Logo
Implementation of avalanche
current single pulse
Removal of ESD class
Update of Infineon address
Removal of foot note 3, avalanche
diagrams
Update of Qrr and trr typ
Update of disclaimer
Implementation of RoHS and AEC
logo, update of feature list
Update of data sheet layout
Adaptation of Ias
implementation of footnote 2 for
Eas specification
removal of Vdg specification from
data sheet
IPB80N06S3L-06
2007-11-07