IPI11N03LA Infineon Technologies, IPI11N03LA Datasheet

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IPI11N03LA

Manufacturer Part Number
IPI11N03LA
Description
MOSFET N-CH 25V 30A I2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPI11N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
11nC @ 5V
Input Capacitance (ciss) @ Vds
1358pF @ 15V
Power - Max
52W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPI11N03LAX
SP000014988

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPI11N03LA
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.7
1)
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPI11N03LA
IPP11N03LA
J-STD20 and JESD22
®
2 Power-Transistor
4)
j
Package
PG-TO262-3-1
PG-TO220-3-1
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
11N03LA
11N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=30 A, R
=30 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
PG-TO262-3-1
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
IPI11N03LA
-55 ... 175
55/175/56
Value
210
±20
30
30
80
52
PG-TO220-3-1
6
IPP11N03LA
11.5
25
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-29

Related parts for IPI11N03LA

IPI11N03LA Summary of contents

Page 1

... I D product (FOM) PG-TO262-3-1 Marking 11N03LA 11N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPI11N03LA IPP11N03LA 25 V 11.5 mΩ PG-TO220-3-1 Value Unit 210 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-29 ...

Page 2

... (BR)DSS =20 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =20 A DS( |>2 DS(on)max = page 2 IPI11N03LA IPP11N03LA Values Unit min. typ. max 2.9 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 14.8 18.5 mΩ - 9.6 11.5 Ω 2008-04-29 ...

Page 3

... DD GS =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPI11N03LA IPP11N03LA Values Unit min. typ. max. - 1021 1358 pF - 393 522 - 8 2.8 4.2 - 3.4 4 1.6 2.2 - 2.3 3.5 - 4.1 5 7 210 - 0.96 1 2008-04-29 ...

Page 4

... Rev. 1.7 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ µs 10 100 µ 100 10 [V] DS page 4 IPI11N03LA IPP11N03LA ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2008-04-29 ...

Page 5

... DS j parameter 4 Typ. transfer characteristics I =f |>2 DS(on)max parameter 175 ° Rev. 1.7 6 Typ. drain-source on resistance R =f(I DS(on) parameter 4 3 Typ. forward transconductance g =f ° [V] GS page 5 IPI11N03LA IPP11N03LA ); T =25 ° 3.2 V 3.5 V 3.8 V 4 [A] D =25 ° [ 2008-04-29 ...

Page 6

... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 IPI11N03LA IPP11N03LA ); 200 µA 20 µA - 100 140 T [° °C 25°C 98% 175°C 98% 175 °C 0.5 1 1.5 V [V] SD 180 2 2008-04-29 ...

Page 7

... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.7 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPI11N03LA IPP11N03LA ); I =15 A pulsed gate [nC] gate ate 2008-04-29 ...

Page 8

... PG-TO262-3-2: Outline PG-TO220-3-2: Outline Rev. 1.7 IPI11N03LA Packaging page 8 IPP11N03LA 2008-04-29 ...

Page 9

... PG-TO220-3-2: Outline Rev. 1.7 IPI11N03LA Packaging page 9 IPP11N03LA 2008-04-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.7 IPI11N03LA page 10 IPP11N03LA 2008-04-29 ...

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