IPI09N03LA Infineon Technologies, IPI09N03LA Datasheet

no-image

IPI09N03LA

Manufacturer Part Number
IPI09N03LA
Description
MOSFET N-CH 25V 50A I2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPI09N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Input Capacitance (ciss) @ Vds
1642pF @ 15V
Power - Max
63W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPI09N03LAX
SP000014032

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPI09N03LA
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.91
1)
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel - Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPI09N03LA
IPP09N03LA
J-STD20 and JESD22
®
2 Power-Transistor
4)
j
Package
PG-TO262-3-1
PG-TO220-3-1
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
09N03LA
09N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=45 A, R
=50 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
PG-TO262-3-1
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
IPI09N03LA, IPP09N03LA
-55 ... 175
55/175/56
Value
350
±20
50
46
75
63
PG-TO220-3-1
6
9.2
25
50
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-29

Related parts for IPI09N03LA

IPI09N03LA Summary of contents

Page 1

... I D product (FOM) PG-TO262-3-1 Marking 09N03LA 09N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPI09N03LA, IPP09N03LA 25 V 9.2 mΩ PG-TO220-3-1 Value Unit 350 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-29 ...

Page 2

... (BR)DSS =20 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPI09N03LA, IPP09N03LA Values Unit min. typ. max 2.4 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 12.4 15.5 mΩ - 7.7 9.2 Ω 2008-04-29 ...

Page 3

... MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPI09N03LA, IPP09N03LA Values Unit min. typ. max. - 1235 1642 pF - 474 630 - 8 109 - 3.2 4.8 - 4.3 5 2.0 2.6 - 2.8 4.3 - 5 350 - 0.99 1 2008-04-29 ...

Page 4

... V Rev. 1.91 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 10 100 0 [V] DS page 4 IPI09N03LA, IPP09N03LA ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...

Page 5

... DS j parameter 4 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.91 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPI09N03LA, IPP09N03LA ); T =25 ° 3.2 V 3.5 V 3 [A] D =25 ° [ 2008-04-29 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss 0.0 [V] DS page 6 IPI09N03LA, IPP09N03LA ); 200 µA 20 µA - 100 140 T [° °C 175°C 98% 175 °C 25°C 98% 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-29 ...

Page 7

... T j(start) 100 100 °C 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.91 14 Typ. gate charge V =f(Q GS parameter ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPI09N03LA, IPP09N03LA ); I =25 A pulsed gate [nC] gate ate 2008-04-29 ...

Page 8

... PG-TO262-3-2: Outline PG-TO220-3-2: Outline Rev. 1.91 IPI09N03LA, IPP09N03LA Packaging page 8 2008-04-29 ...

Page 9

... PG-TO220-3-2: Outline Rev. 1.91 IPI09N03LA, IPP09N03LA Packaging page 9 2008-04-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.91 IPI09N03LA, IPP09N03LA page 10 2008-04-29 ...

Related keywords