IPI03N03LA Infineon Technologies, IPI03N03LA Datasheet

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IPI03N03LA

Manufacturer Part Number
IPI03N03LA
Description
MOSFET N-CH 25V 80A I2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPI03N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
57nC @ 5V
Input Capacitance (ciss) @ Vds
7027pF @ 15V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPI03N03LAX
SP000014036

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPI03N03LA
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.91
1)
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel - Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPI03N03LA
IPP03N03LA
J-STD20 and JESD22
®
2 Power-Transistor
4)
j
Package
PG-TO262-3-1
PG-TO200-3-1
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
03N03LA
03N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=80 A, R
=80 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
PG-TO262-3-1
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
IPI03N03LA, IPP03N03LA
-55 ... 175
55/175/56
Value
385
960
±20
150
80
80
PG-TO220-3-1
6
25
80
3
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-29

Related parts for IPI03N03LA

IPI03N03LA Summary of contents

Page 1

... PG-TO262-3-1 Marking 03N03LA 03N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPI03N03LA, IPP03N03LA mΩ PG-TO220-3-1 Value Unit 385 960 mJ 6 kV/µs ±20 V 150 W -55 ... 175 °C 55/175/56 2008-04-29 ...

Page 2

... GSS =4 =55 A DS( |>2 DS(on)max = K/W the chip is able to carry 175 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPI03N03LA, IPP03N03LA Values Unit min. typ. max K 1.2 1 0.1 1 µ 100 - 10 100 nA - 3.6 4.4 mΩ - 2.5 3.0 Ω ...

Page 3

... Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPI03N03LA, IPP03N03LA Values Unit min. typ. max. - 5283 7027 pF - 2231 2967 - 304 457 - 8 7 8 385 - 0.96 1 2008-04-29 ...

Page 4

... Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 10 100 10 0 [V] DS page 4 IPI03N03LA, IPP03N03LA ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 ...

Page 5

... V Rev. 1.91 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 140 120 100 ° [V] GS page 5 IPI03N03LA, IPP03N03LA ); T =25 ° 2.8 V 3.5 V 3 100 120 140 I [A] D =25 ° [A] D 4 160 80 2008-04-29 ...

Page 6

... I 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss [V] DS page 6 IPI03N03LA, IPP03N03LA ); 1000 µA 100 µA - 100 140 T [° 175 °C 25 °C 175 ° ° 0.5 1 1.5 V [V] SD 180 2 2008-04-29 ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.91 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPI03N03LA, IPP03N03LA ); I =40 A pulsed gate [nC] gate 100 Q g ate 2008-04-29 ...

Page 8

... PG-TO262-3-2: Outline PG-TO220-3-2: Outline Rev. 1.91 IPI03N03LA, IPP03N03LA Packaging page 8 2008-04-29 ...

Page 9

... PG-TO220-3-2: Outline Rev. 1.91 IPI03N03LA, IPP03N03LA Packaging page 9 2008-04-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.91 IPI03N03LA, IPP03N03LA page 10 2008-04-29 ...

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