IPFH6N03LA G Infineon Technologies, IPFH6N03LA G Datasheet
IPFH6N03LA G
Specifications of IPFH6N03LA G
SP000068589
Related parts for IPFH6N03LA G
IPFH6N03LA G Summary of contents
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... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA (SMD version) 6 mΩ IPUH6N03LA G PG-TO251-3-1 H6N03LA Value Unit 350 150 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...
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... IPD version IPD version |>2 DS(on)max = =2.1 K/W the chip is able to carry 80 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Values Unit min. typ. max 2.1 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 8.2 10.2 mΩ ...
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... =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Values Unit min. typ. max. - 1800 2390 pF - 690 920 - 85 130 - 5 4.2 6.3 - 5.9 7 2.9 3.8 - 4.1 6 350 - 0.93 1 2008-04-14 ...
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... Rev. 1.5 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. 100 10 [V] DS page 4 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.5 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA =25 ° 4.1 V 3.8 V 3.5 V 3 [A] D =25 ° [A] D 100 60 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Crss 0.0 [V] DS page 6 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA 300 µA 30 µA - 100 140 T [° °C 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 2.0 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.5 14 Typ. gate charge V =f(Q GS parameter 100 °C 25 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO252-3-11 page 8 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...
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... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO252-3-23 page 9 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...
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... Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO251-3-11 page 10 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...
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... Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO251-3-21 page 11 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 IPDH6N03LA G IPSH6N03LA G page 12 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...