IPF04N03LA Infineon Technologies, IPF04N03LA Datasheet

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IPF04N03LA

Manufacturer Part Number
IPF04N03LA
Description
MOSFET N-CH 25V 50A DPAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPF04N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.8 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 30µA
Gate Charge (qg) @ Vgs
41nC @ 5V
Input Capacitance (ciss) @ Vds
5199pF @ 15V
Power - Max
115W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IPF04N03LAT
SP000014622

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPF04N03LA G
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPF04N03LAG
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.5
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
2 Power-Transistor
IPDH6N03LA G
PG-TO252-3-11
H6N03LA
4)
j
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPFH6N03LA G
PG-TO252-3-23
H6N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=50 A, R
=50 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
IPSH6N03LA G
PG-TO251-3-11
H6N03LA
DS(on),max
IPSH6N03LA G
IPDH6N03LA G
(SMD version)
-55 ... 175
55/175/56
Value
350
150
±20
50
50
71
6
IPUH6N03LA G
PG-TO251-3-1
H6N03LA
IPUH6N03LA G
IPFH6N03LA G
25
50
6
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-14

Related parts for IPF04N03LA

IPF04N03LA Summary of contents

Page 1

OptiMOS ® 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 limited ...

Page 5

Typ. output characteristics I =f =25 ° parameter 100 4 Typ. transfer characteristics I =f(V ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO252-3-11 page 8 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...

Page 9

Package Outline PG-TO252-3-23: Outline Footprint: Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO252-3-23 page 9 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...

Page 10

Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO251-3-11 page 10 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...

Page 11

Package Outline Rev. 1.5 IPDH6N03LA G IPSH6N03LA G PG-TO251-3-21 page 11 IPFH6N03LA G IPUH6N03LA G 2008-04-14 ...

Page 12

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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