IPB11N03LA G Infineon Technologies, IPB11N03LA G Datasheet
IPB11N03LA G
Specifications of IPB11N03LA G
SP000103306
Related parts for IPB11N03LA G
IPB11N03LA G Summary of contents
Page 1
... DS R DS(on),max 1) for target application I D product (FOM) Marking 11N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse = = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB11N03LA (SMD version) 11 PG-TO263-3-2 Value Unit 210 kV/µs ± -55 ... 175 °C 55/175/56 2006-05-11 ...
Page 2
... (BR)DSS =20 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 = DS(on) SMD version SMD version |>2 DS(on)max = page 2 IPB11N03LA G Values Unit min. typ. max 2.9 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 14.5 18 9.3 11 2006-05-11 ...
Page 3
... MHz C rss t d( d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPB11N03LA G Values Unit min. typ. max. - 1021 1358 pF - 393 522 - 8 2.8 4.2 - 3.4 4 1.6 2.2 - 2.3 3.5 - 4.1 5 7 210 - 0.96 1 2006-05-11 ...
Page 4
... V Rev. 1.4 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ µs 10 100 µ 100 10 [V] DS page 4 IPB11N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2006-05-11 ...
Page 5
... Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f |>2 DS(on)max parameter 175 ° Rev. 1.4 6 Typ. drain-source on resistance R =f(I DS(on) parameter 4 3 Typ. forward transconductance g =f ° [V] GS page 5 IPB11N03LA =25 ° 3.2 V 3.5 V 3.8 V 4 [A] D =25 ° [ 2006-05-11 ...
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... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 IPB11N03LA 200 µA 20 µA - 100 140 T [° °C 175°C 98% 175 °C 25°C 98% 0.5 1 1.5 V [V] SD 180 2 2006-05-11 ...
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... AV GS parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.4 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB11N03LA =15 A pulsed gate [nC] gate ate 2006-05-11 ...
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... Package Outline PG-TO263-3-2: Outline Footprint Rev. 1.4 PG-TO263-3-2 Packaging page 8 IPB11N03LA G 2006-05-11 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 9 IPB11N03LA G 2006-05-11 ...