BSS169 E6327 Infineon Technologies, BSS169 E6327 Datasheet - Page 5

• Manufacturer Part Number: BSS169 E6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS169 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 7V
• Input Capacitance (ciss) @ Vds: 68pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS169E6327XT; SP000011172

Rev. 1.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.5
0.4
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
DS
GS
0
0
-2
); T
0
); |V
j
=25 °C
10 V
DS
GS
|>2|I
2
1 V
-1
D
|R
DS(on)max
4
V
V
DS
GS
0
[V]
[V]
6
1
8
-0.1 V
-0.2 V
0.5 V
0.1 V
0 V
0.2 V
10
2
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
14
12
10
D
=f(I
0
8
6
4
2
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
0.10
0.1
-0.2 V
-0.1 V
0.20
0.2
0 V
0.1 V
I
I
D
D
[A]
[A]
0.2 V
0.30
0.3
0.5 V
0.40
0.4
2007-02-07
BSS169
10 V
1 V
0.50
0.5