BSS138W E6433 Infineon Technologies, BSS138W E6433 Datasheet - Page 4
![MOSFET N-CH 60V 280MA SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BSS138W E6433
Manufacturer Part Number
BSS138W E6433
Description
MOSFET N-CH 60V 280MA SOT-323
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138W_L6327.pdf
(9 pages)
Specifications of BSS138W E6433
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
1.4V @ 26µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138WE6433
SP000014284
SP000014284
Rev. 2.41
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.5
0.4
0.3
0.2
0.1
10
10
DS
0
-1
-2
-3
1
0
A
); T
0
)
1
limited by on-state
resistance
A
p
=25 °C; D =0
40
T
V
A
DS
80
10
[°C]
[V]
100 ms
10 ms
100 µs
DC
120
10 µs
1 ms
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.25
0.15
0.05
=f(t
10
10
0.3
0.2
0.1
10
10
10
10
A
0
-1
-2
); V
3
2
1
0
10
p
0
)
-6
0.02
0.01
0.05
0.5
0.2
GS
0.1
single pulse
10
≥10 V
-5
p
/T
10
40
-4
10
-3
T
t
A
10
p
80
[°C]
[s]
-2
10
-1
10
120
BSS138W
0
10
1
10
160
2009-11-19
2