BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 8

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Drain-source breakdown voltage
V
(BR)DSS
V
72
68
66
64
62
60
58
56
54
-60
BSP318S
= f ( T
-20
j
)
20
60
100
°C
T
j
180
Rev 2.2
Page 8
2008-03-21
BSP318S