BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 2

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
Drain-Source on-state resistance
V
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= 20 µA
= 60 V, V
= 60 V, V
= 0 V, I
= 20 V, V
= 4.5 V, I
= 10 V, I
2
cooling area
D
D
= 0.25 mA
D
GS
GS
DS
= 2.6 A
= 2.6 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 150 °C
= V
j
DS
= 25 °C, unless otherwise specified
Rev 2.2
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
1.2
60
-
-
-
-
-
-
-
-
Values
Values
typ.
0.12
0.07
typ.
100
1.6
0.1
10
17
-
-
-
max.
max.
0.15
0.09
100
100
70
2008-03-21
2
1
-
BSP318S
-
-
Unit
V
µA
nA
Unit
K/W