BSC024N025S G Infineon Technologies, BSC024N025S G Datasheet

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BSC024N025S G

Manufacturer Part Number
BSC024N025S G
Description
MOSFET N-CH 25V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSC024N025S G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 90µA
Gate Charge (qg) @ Vgs
52nC @ 5V
Input Capacitance (ciss) @ Vds
6530pF @ 15V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSC024N025SGXT
SP000095464
Rev. 1.4
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• Logic level / N-channel
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS™2 Power-Transistor
Type
BSC024N025S G
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1
for target applications
product (FOM)
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
24N025S
stg
T
T
T
R
T
I
I
di /dt =200 A/µs,
T
T
T
R
D
D
page 1
C
C
A
C
j,max
C
A
thJA
=50 A, R
=50 A, V
thJA
=25 °C,
=25 °C,
=25 °C
=100 °C
=25 °C
=25 °C
=45 K/W
=45 K/W
=150 °C
3)
DS
GS
=24 V,
=25 Ω
Product Summary
V
R
I
2)
2)
D
DS
DS(on),max
-55 ... 150
55/150/56
Value
PG-TDSON-8
100
200
800
±20
2.8
95
27
89
6
BSC024N025S G
100
2.4
25
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2009-10-22

Related parts for BSC024N025S G

BSC024N025S G Summary of contents

Page 1

... C T =25 ° =45 K/W thJA =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC024N025S 2.4 mΩ 100 A PG-TDSON-8 Value Unit 100 200 800 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2009-10-22 ...

Page 2

... GS(th = DSS T =25 ° = =125 ° = GSS =4 =50 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC024N025S G Values Unit min. typ. max 1.4 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 3.0 3.7 mΩ - 2.0 2.4 Ω 119 - S 2009-10-22 ...

Page 3

... See figure 16 for gate charge parameter definition Rev. 1.4 Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC024N025S G Values Unit min. typ. max. - 4910 6530 pF - 1870 2490 - 220 330 - 8 2 200 - 0. 2009-10-22 ...

Page 4

... V Rev. 1.4 2 Drain current I =f 120 100 120 160 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ 100 µ [V] DS page 4 BSC024N025S G ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 0 10 2009-10-22 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 200 160 120 80 40 150 ° Rev. 1.4 6 Typ. drain-source on resistance R =f(I DS(on) parameter 3 3 Typ. forward transconductance g =f 160 120 ° [V] GS page 5 BSC024N025S =25 ° 3.2 V 3.4 V 3 [A] D =25 ° [ 100 75 2009-10-22 ...

Page 6

... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.4 2 1.6 typ 1.2 0.8 0 140 190 -60 [° Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 BSC024N025S 900 µA 90 µA - 140 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0 0.5 1 1.5 V [V] SD 190 2 2009-10-22 ...

Page 7

... T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.4 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 125 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 90 140 190 [°C] j page 7 BSC024N025S =25 A pulsed gate [nC] gate 100 Q g ate 2009-10-22 ...

Page 8

... Package Outline P-TDSON-8: Outline Rev. 1.4 PG-TDSON-8 page 8 BSC024N025S G 2009-10-22 ...

Page 9

... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 1.4 page 9 BSC024N025S G 2009-10-22 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 10 BSC024N025S G 2009-10-22 ...

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