IPB09N03LAT Infineon Technologies, IPB09N03LAT Datasheet

Page 1

OptiMOS ® 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC • N-channel - Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 limited by ...

Page 5

Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f |>2|I ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. Capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 100 °C 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline PG-TO263-3-2: Outline Footprint Rev. 1.6 PG-TO263-3-2 Packaging page 8 IPB09N03LA G 2006-05-11 ...

Page 9

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...