BS107AG ON Semiconductor, BS107AG Datasheet - Page 3
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BS107AG
Manufacturer Part Number
BS107AG
Description
MOSFET N-CH 200V 250MA TO-92
Manufacturer
ON Semiconductor
Specifications of BS107AG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.4 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
350mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Drain
250 mA
Package Type
TO-92 (TO-226)
Polarization
N-Channel
Power Dissipation
350 mW
Resistance, Drain To Source On
4.9 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Transconductance, Forward
400 Millimhos
Voltage, Breakdown, Drain To Source
200 V
Voltage, Gate To Source
±20 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
BS107AGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BS107AG
Manufacturer:
ON
Quantity:
16 000
SEATING
PLANE
R
X X
1
A
V
H
N
G
N
P
L
C
K
B
PACKAGE DIMENSIONS
STRAIGHT LEAD
SECTION X-X
BS107, BS107A
TO-92 (TO-226)
BULK PACK
CASE 29-11
ISSUE AM
D
4
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
STYLE 30:
Y14.5M, 1982.
IS UNCONTROLLED.
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
K
N
P
R
V
J
L
PIN 1. DRAIN
2. GATE
3. SOURCE
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.135
0.115
MIN
---
INCHES
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MAX
---
---
---
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0.407
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
1.15
2.42
0.39
6.35
2.04
2.93
3.43
---
MAX
0.533
5.20
5.33
4.19
1.39
2.66
0.50
2.66
2.54
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BS107/D