BS107AG ON Semiconductor, BS107AG Datasheet - Page 3

• Manufacturer Part Number: BS107AG
• Description: MOSFET N-CH 200V 250MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BS107AG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Drain: 250 mA
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 4.9 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Transconductance, Forward: 400 Millimhos
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: BS107AGOS

SEATING
PLANE
R
X X
1
A
V
H
N
G
N
P
L
C
K
B
PACKAGE DIMENSIONS
STRAIGHT LEAD
SECTION X-X
BS107, BS107A
TO-92 (TO-226)
BULK PACK
CASE 29-11
ISSUE AM
D
4
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
STYLE 30:
Y14.5M, 1982.
IS UNCONTROLLED.
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
K
N
P
R
V
J
L
PIN 1. DRAIN
2. GATE
3. SOURCE
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.135
0.115
MIN
---
INCHES
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MAX
---
---
---
---
0.407
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
1.15
2.42
0.39
6.35
2.04
2.93
3.43
---
MAX
0.533
5.20
5.33
4.19
1.39
2.66
0.50
2.66
2.54
---
---
---
---
BS107/D