BS107AG ON Semiconductor, BS107AG Datasheet

BS107AG

Manufacturer Part Number

BS107AG

Description

MOSFET N-CH 200V 250MA TO-92

Manufacturer

ON Semiconductor

Datasheets

1.BS107ARL1G.pdf (4 pages)

2.BS107AG.pdf (3 pages)

Specifications of BS107AG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6.4 Ohm @ 250mA, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

250mA

Vgs(th) (max) @ Id

3V @ 1mA

Input Capacitance (ciss) @ Vds

60pF @ 25V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Current, Drain

250 mA

Package Type

TO-92 (TO-226)

Polarization

N-Channel

Power Dissipation

350 mW

Resistance, Drain To Source On

4.9 Ohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Transconductance, Forward

400 Millimhos

Voltage, Breakdown, Drain To Source

200 V

Voltage, Gate To Source

±20 VDC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Other names

BS107AGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS107AG

Manufacturer:

Quantity:

3 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS107AG

Manufacturer:

Quantity:

16 000

Current page: 1 of 3
Download datasheet (70Kb)

BS107, BS107A

Small Signal MOSFET

250 mAmps, 200 Volts

N-Channel TO-92

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The Power Dissipation of the package may result in a lower continuous drain

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb-Free strategy and soldering details, please

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Device Dissipation @ T

Operating and Storage Junction

current.

AEC Qualified

PPAP Capable

Pb-Free Package is Available*

- Continuous

- Non-repetitive (t

Continuous (Note 1)

Pulsed (Note 2)

Derate above 25°C

Temperature Range

Rating

≤ 50 ms)

Preferred Device

= 25°C

Symbol

GSM

, T

stg

-55 to

Value

200

±20

±30

250

500

350

150

mAdc

Unit

Vdc

Vpk

°C

BS107ARL1

BS107ARL1G

Preferred devices are recommended choices for future use

and best overall value.

BS107

BS107G

BS107A

BS107AG

Device

(Note: Microdot may be in either location)

250 mAMPS, 200 VOLTS

DS(on)

ORDERING INFORMATION

DS(on)

xxx

CASE 29-11

= 6.4 W (BS107A)

STYLE 30

= BS107 or BS107A

= Assembly Location

= Year

= Work Week

= Pb-Free Package

(Pb-Free)

Package

= 14 W (BS107)

TO-92

Publication Order Number:

N-Channel

2000/Ammo Pack

1000 Units/Box

MARKING

DIAGRAM

Shipping

YWW G

xxx

BS107/D

Related parts for BS107AG

BS107AG Summary of contents

Page 1

... D I 500 DM P 350 mW D ° - stg 150 1 2 BS107 BS107G BS107A BS107AG BS107ARL1 BS107ARL1G Preferred devices are recommended choices for future use and best overall value. 1 250 mAMPS, 200 VOLTS = 14 W (BS107) R DS(on) = 6.4 W (BS107A) R DS(on) N-Channel MARKING DIAGRAM A xxx ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Zero-Gate-Voltage Drain Current (V DS Drain-Source Breakdown Voltage (V GS Gate Reverse Current ( Vdc CHARACTERISTICS (Note 3) Gate Threshold Voltage (I = 1.0 mAdc Static Drain-Source On ...

Page 3

PACKAGE DIMENSIONS SEATING K PLANE BS107, BS107A TO-92 (TO-226) CASE 29-11 ISSUE AM NOTES: STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. BULK PACK ...

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