2N7002LT1G ON Semiconductor, 2N7002LT1G Datasheet - Page 2

• Manufacturer Part Number: 2N7002LT1G
• Description: MOSFET N-CH 60V 115MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of 2N7002LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.00008 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: ±115 mA
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 7.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 Millimhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: -1.5 VDC
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 115mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Dc: 1009
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002LT1GOSTR

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
BODY−DRAIN DIODE RATINGS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
Gate Threshold Voltage
On−State Drain Current
Static Drain−Source On−State Voltage
Static Drain−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
Diode Forward On−Voltage
Source Current Continuous
Source Current Pulsed
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(Body Diode)
S
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
= 11.5 mAdc, V
= V
≥ 2.0 V
≥ 2.0 V
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
= 0, I
= 0, V
= 20 Vdc)
= − 20 Vdc)
= 10 Vdc, I
= 5.0 Vdc, I
= 10 V, I
= 5.0 Vdc, I
GS
D
DS
, I
= 10 mAdc)
DS(on)
DS(on)
D
D
= 60 Vdc)
= 250 mAdc)
= 500 mAdc)
D
D
D
GS
GS
GS
, V
= 500 mAdc)
, I
GS
= 50 mAdc)
= 50 mAdc)
D
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
GS
= 0 V)
= 200 mAdc)
= 10 Vdc)
Characteristic
R
G
(V
= 25 W, R
DD
= 25 Vdc, I
(T
A
= 25°C unless otherwise noted)
L
= 50 W, V
D
^ 500 mAdc,
http://onsemi.com
gen
T
T
T
T
T
C
C
T
J
= 10 V)
C
C
J
= 125°C
= 125°C
= 125°C
= 25°C
= 25°C
= 25°C
2
V
Symbol
V
V
r
(BR)DSS
I
I
I
DS(on)
t
t
GSSR
C
I
GSSF
DS(on)
GS(th)
D(on)
C
C
V
g
d(on)
d(off)
DSS
I
SM
I
FS
oss
SD
rss
iss
S
Min
500
1.0
60
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.375
−800
−100
−115
Max
3.75
13.5
13.5
−1.5
500
100
1.0
2.5
7.5
7.5
5.0
50
25
20
40
−
−
−
Ohms
mAdc
mAdc
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mA
mS
pF
pF
pF
ns
ns