2N7002LT1G ON Semiconductor, 2N7002LT1G Datasheet
2N7002LT1G
Manufacturer Part Number
2N7002LT1G
Description
MOSFET N-CH 60V 115MA SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of 2N7002LT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.00008 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
±115 mA
Package Type
SOT-23 (TO-236)
Polarization
N-Channel
Resistance, Drain To Source On
7.5 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
80 Millimhos
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
-1.5 VDC
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
7.5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
115mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Dc
1009
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
2N7002LT1G
Manufacturer:
ON
Quantity:
96 000
Company:
Part Number:
2N7002LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
2N7002LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2N7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Source Voltage
Drain−Gate Voltage (R
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Drain Current
Gate−Source Voltage
Total Device Dissipation FR−5 Board
Total Device Dissipation
Compliant
AEC Qualified
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
current.
− Continuous T
− Continuous
− Pulsed (Note 2)
− Continuous
− Non−repetitive (t
(Note 3) T
Derate above 25°C
Alumina Substrate,(Note 4) T
Derate above 25°C
A
Characteristic
= 25°C
T
Rating
C
C
= 25°C (Note 1)
= 100°C (Note 1)
p
GS
≤ 50 ms)
= 1.0 MW)
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
V
J
I
P
P
DGR
GSM
, T
DSS
DM
I
I
qJA
qJA
GS
D
D
D
D
stg
−55 to
Value
± 115
± 800
+150
Max
± 75
± 20
± 40
225
556
300
417
1.8
2.4
60
60
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Vpk
mW
mW
°C
†For information on tape and reel specifications,
2N7002LT1G
2N7002LT3G
2N7002LT1H
2N7002LT3H
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
*Date Code orientation and/or position may
(BR)DSS
vary depending upon manufacturing location.
60 V
Device
(Note: Microdot may be in either location)
1
CASE 318
STYLE 21
ORDERING INFORMATION
SOT−23
702
M
G
1
2
http://onsemi.com
(Pb−Free)
7.5 W @ 10 V,
Package
R
SOT−23
SOT−23
(Halide−
3
N−Channel
= Device Code
= Date Code*
= Pb−Free Package
Free)
DS(on)
500 mA
Publication Order Number:
3
2
MAX
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
1
MARKING
DIAGRAM
Shipping
702 MG
G
2N7002L/D
I
115 mA
D
MAX
†
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2N7002LT1G Summary of contents
Page 1
... J stg +150 *Date Code orientation and/or position may vary depending upon manufacturing location. Device 2N7002LT1G 2N7002LT3G 2N7002LT1H 2N7002LT3H †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( mAdc Zero Gate Voltage Drain Current ( Vdc Gate−Body Leakage Current, Forward ( Vdc) GS ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1 25°C A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1.0 2.0 3.0 4.0 5.0 6 DRAIN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2.4 2 ...
Page 4
... SCALE 10:1 inches 0.8 0.031 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 MILLIMETERS INCHES MIN NOM ...