NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 5

• Manufacturer Part Number: NTR2101PT1G
• Description: MOSFET P-CH 8V 3.7A SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTR2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1173pF @ 4V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTR2101PT1GOSTR

NTR2101P
TYPICAL CHARACTERISTICS
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
1
0.01
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 12. Thermal Response
http://onsemi.com
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