NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 2
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NTR2101PT1G
Manufacturer Part Number
NTR2101PT1G
Description
MOSFET P-CH 8V 3.7A SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of NTR2101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
8V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1173pF @ 4V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTR2101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR2101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Temperature Coefficient
Temperature Coefficient
Parameter
(T
J
= 25°C unless otherwise stated)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
(BR)DSS
C
C
t
t
GS(TH)
C
G(TOT)
I
I
Q
Q
DS(on)
V
g
d(on)
d(off)
GSS
DSS
OSS
RSS
ISS
t
FS
GS
GD
t
SD
r
f
/T
http://onsemi.com
/T
J
J
V
V
V
GS
V
V
V
V
GS
V
V
V
I
V
V
DS
V
2
I
S
GS
GS
GS
GS
D
GS
GS
GS
DS
GS
GS
= −1.2 A
= −4.5 V, V
= −4.5 V, V
= −1.2 A, R
= −6.4 V
Test Condition
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −5.0 V, I
= 0 V,
= V
= 0 V,
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, I
V
I
DS
D
DS
= −3.5 A
= −4.0 V
, I
D
D
GS
= −250 mA
DS
DD
= −250 mA
D
D
D
G
D
= ±8.0 V
= −3.5 A
= −3.0 A
= −3.5 A
= 6.0 W
= −2.0 A
T
= −4.0 V,
= −4.0 V,
T
T
J
J
J
= 125°C
= 25°C
= 25°C
−0.40
−8.0
Min
0.0027
15.75
−0.73
1173
Typ
289
218
9.0
3.8
2.5
7.4
10
39
52
79
12
38
31
−100
±100
Max
−1.0
−1.0
−1.2
120
52
72
15
15
25
58
51
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
ns
V
V
S
V