NTJS4151PT1 ON Semiconductor, NTJS4151PT1 Datasheet - Page 3

• Manufacturer Part Number: NTJS4151PT1
• Description: MOSFET P-CH 20V 3.3A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS4151PT1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTJS4151PT1OSCT

0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
0.8
0.6
4
3
2
1
0
0
1
−50
0
0
V
I
D
GS
−25
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
= −3.3 A
−V
−V
= 4.5 V
Figure 3. On−Resistance versus
V
DS
GS
T
GS
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
2
0
V
Gate−to−Source Voltage
= −2.8 V to 6.0 V
GS
V
V
2
= −1.0 V
GS
GS
25
Temperature
= −2.4 V
= −2.0 V
V
50
GS
.
4
= −1.8 V
75
4
100
6
V
V
V
I
GS
GS
GS
T
D
T
J
= −3.3 A
J
= 25°C
= −1.6 V
= −1.4 V
= −1.2 V
= 25°C
125
http://onsemi.com
150
8
6
3
100000
10000
1000
100
0.6
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
0
0
1
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
T
V
V
J
DS
GS
Figure 2. On−Region Characteristics
−V
= 25°C
−V
w −10 V
DS
= 0 V
DS
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
2
1
V
−I
GS
D
, DRAIN CURRENT (A)
and Gate Voltage
= −4.5 V
versus Voltage
8
T
V
J
3
2
GS
= 150°C
= −1.8 V
12
V
GS
= −2.5 V
3
4
16
20
5
4