NTJS4151PT1 ON Semiconductor, NTJS4151PT1 Datasheet - Page 2

• Manufacturer Part Number: NTJS4151PT1
• Description: MOSFET P-CH 20V 3.3A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS4151PT1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTJS4151PT1OSCT

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Coefficient
Parameter
(T
J
=25°C unless otherwise stated)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
GSS
t
DSS
OSS
T
RSS
RR
T
ISS
t
FS
GD
t
SD
GS
RR
r
f
a
b
/T
/T
J
J
http://onsemi.com
V
V
V
V
V
V
V
GS
GS
V
GS
V
V
V
V
V
I
V
V
GS
GS
GS
D
GS
GS
DS
GS
GS
DS
DS
GS
GS
= −4.5 V, V
= −4.5 V, V
= −1.0 A, R
= −16 V,
Test Condition
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= V
= 0 V, V
= −10 V, I
= 0 V, I
= 0 V
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, dI
= 0 V, I
V
I
I
2
D
T
S
DS
DS
J
= −3.3 A
= −1.3 A
A/ms,
= 25°C
, I
= −10 V
D
D
GS
S
GS
S
= −250 mA
D
DS
DD
= −250 mA
D
D
G
= −1.3 A,
D
/dt = 100
T
T
= ±4.5 V
= −3.3 A
= ±12 V
= −3.3 A
= −2.3 A
= 6.0 W
= −1.0 A
J
J
= −10 V,
= −10 V,
= 25°C
= 85°C
−0.40
Min
−20
−0.75
0.85
0.23
Typ
−12
180
850
160
110
4.0
1.5
2.8
1.7
2.7
4.2
9.0
47
70
12
10
63
54
Max
−1.0
−5.0
±1.5
−1.2
−1.2
±10
205
60
85
mV/°C
mV/°C
Unit
mW
mA
mA
mA
pF
nC
nC
ms
ns
V
V
S
V