MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 8
![MOSFET P-CH 60V 12A DPAK](/photos/5/30/53089/dpak_369c_sml.jpg)
MTD2955VT4
Manufacturer Part Number
MTD2955VT4
Description
MOSFET P-CH 60V 12A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MTD2955VT4.pdf
(9 pages)
Specifications of MTD2955VT4
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTD2955VT4OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTD2955VT4
Manufacturer:
ONSEMI
Quantity:
905
V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
M
C
0.228
5.80
T
−T−
E
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
SEATING
PLANE
U
0.244
http://onsemi.com
0.101
6.20
2.58
CASE 369C−01
ISSUE O
DPAK−3
8
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
DIM
PER ANSI Y14.5M, 1982.
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
U
V
F
J
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−