MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 3

• Manufacturer Part Number: MTD2955VT4
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD2955VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD2955VT4OS

0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25
20
15
10
− 50
5
0
0
0
0
0
Figure 3. On−Resistance versus Drain Current
T
V
I
J
V
D
GS
= 25°C
GS
− 25
= 6 A
Figure 5. On−Resistance Variation with
1
= 10 V
Figure 1. On−Region Characteristics
= 10 V
3
V
DS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
T
6
J
, JUNCTION TEMPERATURE (°C)
I
3
D
, DRAIN CURRENT (AMPS)
and Temperature
25
V
GS
9
Temperature
4
= 10 V
T
50
J
− 55°C
25°C
= 100°C
12
5
75
TYPICAL ELECTRICAL CHARACTERISTICS
6
15
100
9 V
7
18
125
8
21
http://onsemi.com
150
9
8 V
7 V
6 V
5 V
175
24
10
3
0.250
0.225
0.200
0.150
0.125
0.100
0.075
0.050
0.175
1000
100
24
21
18
15
12
10
9
6
3
0
2
0
0
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
= 25°C
= 0 V
≥ 10 V
3
3
Figure 6. Drain−To−Source Leakage
Figure 2. Transfer Characteristics
10
V
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
6
Current versus Voltage
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
20
5
9
V
T
J
GS
25°C
100°C
= 125°C
15 V
12
30
6
T
= 10 V
J
= − 55°C
15
7
40
18
8
50
100°C
21
9
24
10
60