NTF3055-160T3LF ON Semiconductor, NTF3055-160T3LF Datasheet - Page 2

• Manufacturer Part Number: NTF3055-160T3LF
• Description: MOSFET N-CH 60V 2A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF3055-160T3LF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTF3055-160T3LFOS

3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE–DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3.)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage (Note 3.)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 3.)
Static Drain–to–Source On–Resistance (Note 3.)
Forward Transconductance (Note 3.)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V GS = 0 Vdc, I D = 250 Adc)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 C)
(V DS = V GS , I D = 250 Adc)
(V GS = 10 Vdc, I D = 1.0 Adc)
(V GS = 10 Vdc, I D = 2.0 Adc)
(V GS = 10 Vdc, I D = 1.0 Adc, T J = 150 C)
300 s, Duty Cycle
(Note 3.)
Characteristic
(V GS =
(Note 4.)
(T A = 25 C unless otherwise noted)
(V DD = 30 Vdc, I D = 2.0 Adc,
(V
(V DS = 48 Vdc, I D = 2.0 Adc,
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc,
(I S = 2.0 Adc, V GS = 0 Vdc,
(I S
(V
(V DS = 25 Vdc, V GS = 0 V,
dI S /dt = 100 A/ s) (Note 3.)
20 Vdc, V DS = 0 Vdc)
V GS = 10 Vdc) (Note 3.)
V GS = 10 Vdc) (Note 3.)
(V DS = 8.0 Vdc, I D = 1.5 Adc)
R G = 9.1 ) (Note 3.)
R G
T J = 150 C) (Note 3.)
2.0 Adc, V GS
V GS = 10 Vdc
V GS = 10 Vdc,
2.0%.
48 Vd I
f = 1.0 MHz)
f = 1.0 MHz)
25 Vd
9.1 ) (Note 3.)
http://onsemi.com
NTF3055–160
V
2 0 Ad
0 Vdc,
0 V
2
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C rss
V SD
C iss
Q T
g fs
Q 1
Q 2
t rr
t a
t b
t r
t f
Min
2.0
60
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.142
0.270
0.030
0.86
0.70
28.9
19.1
Typ
142
200
3.1
6.6
1.8
9.2
9.2
9.2
6.9
1.4
3.0
9.8
72
72
68
26
16
–
–
–
0.384
Max
160
280
100
1.0
4.0
1.0
10
40
20
20
40
20
14
100
–
–
–
–
–
–
–
–
–
–
–
–
mV/ C
mV/ C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
m
nC
Adc
pF
ns
ns
C