NIF9N05CLT3 ON Semiconductor, NIF9N05CLT3 Datasheet

NIF9N05CLT3

Manufacturer Part Number

NIF9N05CLT3

Description

MOSFET N-CH 52V 2.6A SOT223

Manufacturer

ON Semiconductor

Datasheet

1.NIF9N05CLT3G.pdf (6 pages)

Specifications of NIF9N05CLT3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

125 mOhm @ 2.6A, 10V

Drain To Source Voltage (vdss)

52V

Current - Continuous Drain (id) @ 25° C

2.6A

Vgs(th) (max) @ Id

2.5V @ 100µA

Gate Charge (qg) @ Vgs

7nC @ 4.5V

Input Capacitance (ciss) @ Vds

250pF @ 35V

Power - Max

1.69W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

NIF9N05CLT3OS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NIF9N05CLT3

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NIF9N05CLT3G

Manufacturer:

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NIF9N05CLT3G

Manufacturer:

Quantity:

12 500

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NIF9N05CL

Protected Power MOSFET

2.6 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ ESD Protection

in a SOT−223 Package

Benefits

•

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in

2. When surface mounted to a FR4 board using minimum recommended pad

May, 2006 − Rev. 5

MAXIMUM RATINGS

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage − Continuous

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source

Avalanche Energy (V

A, V

Thermal Resistance,

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

High Energy Capability for Inductive Loads

Low Switching Noise Generation

Diode Clamp Between Gate and Source

ESD Protection − HBM 5000 V

Active Over−Voltage Gate to Drain Clamp

Scalable to Lower or Higher R

Internal Series Gate Resistance

Pb−Free Packages are Available

Automotive and Industrial Markets:

size, (Cu area 0.412 in

− Continuous @ T

− Single Pulse (t

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

= 10 V, L = 160 mH, R

Rating

= 10 ms) (Note 1)

= 25°C

= 50 V, I

= 25°C unless otherwise noted)

= 25°C (Note 1)

= 25 W)

D(pk)

DS(on)

= 1.17

Symbol

, T

DSS

qJA

stg

−55 to 150

52−59

Value

1.69

±15

110

169

260

2.6

°C/W

Unit

°C

(Pin 1)

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Gate

(Clamped)

52 V

(Note: Microdot may be in either location)

DSS

SOURCE

ESD Protection

F9N05 = Specific Device Code

DRAIN

ORDERING INFORMATION

GATE

MARKING DIAGRAM

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Overvoltage

Protection

DS(ON)

(Top View)

107 mW

Publication Order Number:

TYP

CASE 318E

SOT−223

STYLE 3

NIF9N05CL/D

DRAIN

(Pins 2, 4)

Source

2.6 A

(Pin 3)

Drain

MAX

PWR

Related parts for NIF9N05CLT3

NIF9N05CLT3 Summary of contents

Page 1

NIF9N05CL Protected Power MOSFET 2 N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1.0 mA 25° 1.0 mA −40°C to 125° ...

Page 3

MOSFET ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge ...

Page 4

V = 10, 5 & 3 3 3 2.8 V 2 DRAIN−TO−SOURCE VOLTAGE (VOLTS) ...

Page 5

... Figure 9. Resistance Switching Time Variation vs. Gate Resistance ORDERING INFORMATION Device NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NIF9N05CL TYPICAL PERFORMANCE CURVES 25°C ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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