NIF9N05CL ON Semiconductor, NIF9N05CL Datasheet
NIF9N05CL
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NIF9N05CL Summary of contents
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... Source (Pin 3) SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM 1 GATE 4 2 DRAIN DRAIN 3 SOURCE (Top View Assembly Location Y = Year W = Work Week F9N05 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Publication Order Number: NIF9N05CL/D PWR ...
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... DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NIF9N05CL (T = 25°C unless otherwise noted) J Symbol 2 ...
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... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge ESD CHARACTERISTICS Electro−Static Discharge Capability 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NIF9N05CL (T = 25°C unless otherwise noted) J Symbol t d(on ...
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... Figure 3. On−Resistance vs. Gate−to−Source Voltage I = 2 1.7 1.5 1.3 1.1 0.9 0.7 0.5 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NIF9N05CL TYPICAL PERFORMANCE CURVES 25°C J ≥ 25° 0. 25° ...
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... Figure 9. Resistance Switching Time Variation vs. Gate Resistance ORDERING INFORMATION Device NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NIF9N05CL TYPICAL PERFORMANCE CURVES 25° ...
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... E 0° − 10° 0° − 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NIF9N05CL/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...