MTB50P03HDLT4 ON Semiconductor, MTB50P03HDLT4 Datasheet - Page 8

• Manufacturer Part Number: MTB50P03HDLT4
• Description: MOSFET P-CH 30V 50A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB50P03HDLT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTB50P03HDLT4OSCT

SEATING
PLANE
−T−
VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
1
G
−B−
4
2
F
1
3
D
0.13 (0.005)
L
3 PL
S
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
M
R
T
VIEW W−W
B
M
K
F
2
8.38
0.33
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
C
H
N
http://onsemi.com
MTB50P03HDL
CASE 418B−04
L
A
E
17.02
D
0.67
J
ISSUE J
V
2
W
W
PAK 3
8
M
U
VIEW W−W
F
3
3.05
0.12
SCALE 3:1
1.016
0.04
P
L
inches
mm
5.08
0.20
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
STYLE 2:
DIM
G
M
PIN 1. GATE
A
B
C
D
E
F
H
J
K
L
N
P
R
S
V
2. DRAIN
3. SOURCE
4. DRAIN
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.025
0.072
0.320
0.625
0.055
0.110
0.110
MAX
14.60
MILLIMETERS
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
1.14
MIN
7.11
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40