MTB50P03HDLT4 ON Semiconductor, MTB50P03HDLT4 Datasheet - Page 2

• Manufacturer Part Number: MTB50P03HDLT4
• Description: MOSFET P-CH 30V 50A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB50P03HDLT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTB50P03HDLT4OSCT

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance
Drain−Source On−Voltage (V
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 8)
Forward On−Voltage
Reverse Recovery Time
(See Figure 15)
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V
(V
(V
(V
(V
(V
(I
(I
(V
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
D
D
GS
DS
DS
GS
DS
GS
DS
= 50 Adc)
= 25 Adc, T
= 0 Vdc, I
= 30 Vdc, V
= 30 Vdc, V
= ±15 Vdc, V
= V
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
, I
D
J
D
= 250 mAdc)
=125°C)
D
= 250 mAdc)
D
GS
GS
DS
= 25 Adc)
= 25 Adc)
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
C
pk
GS
=
= 5.0 Vdc)
Characteristic
J
Max limit − Typ
= 125°C)
3 x SIGMA
(V
(I
(T
DS
S
J
= 50 Adc, V
= 25 Vdc, V
= 25°C unless otherwise noted)
V
(V
(V
(I
(I
GS
S
S
DS
DD
= 50 Adc, V
= 50 Adc, V
= 5.0 Vdc, R
dI
= 15 Vdc, I
= 24 Vdc, I
V
S
GS
/dt = 100 A/ms)
GS
GS
http://onsemi.com
MTB50P03HDL
= 5.0 Vdc)
(C
(C
(C
= 0 Vdc, T
= 0 Vdc, f = 1.0 MHz)
pk
pk
pk
GS
GS
D
D
≥ 2.0) (Note 3)
≥ 3.0) (Note 3)
≥ 3.0) (Note 3)
G
= 50 Adc,
= 50 Adc,
= 0 Vdc)
= 0 Vdc,
= 2.3 W)
2
J
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
DS(on)
C
V
GS(th)
g
C
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
L
L
t
t
t
FS
oss
t
t
SD
iss
rss
RR
rr
a
b
r
D
S
f
T
1
2
3
Min
1.0
30
15
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.246
3500
1550
20.9
0.83
13.6
44.8
2.39
1.84
Typ
550
340
218
106
1.5
4.0
3.5
7.5
26
20
22
90
74
35
58
48
−
−
−
−
−
4900
2170
Max
100
770
466
117
300
100
1.0
2.0
1.5
1.3
3.0
10
25
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mW
nC
mC
nH
nH
pF
ns
ns