SPD30P06P Infineon Technologies, SPD30P06P Datasheet - Page 4

• Manufacturer Part Number: SPD30P06P
• Description: MOSFET P-CH 60V 30A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD30P06P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 1.7mA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000012842; SP000077529; SPD30P06PINTR; SPD30P06PT; SPD30P06PXTINTR; SPD30P06PXTINTR

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
C
C
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
Rev 2.0
= -48 V, I
= -48 V, I
= -48 V, I
= -48 V , I
= 0 V, I
F
F
F =
= -30
= I
D
D
D
D
l
S
S
= -30 A
= -30 A
= -30 A, V
= -30 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
rr
gs
gd
g
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
typ.
13.8
-5.2
typ.
64.6
-1.3
153
3.7
32
-
-
SPD30P06P
SPU30P06P
max.
max.
20.7
-120
-1.7
230
5.6
-30
48
97
2008-02-18
-
Unit
nC
V
Unit
A
V
ns
nC