SPB21N10 Infineon Technologies, SPB21N10 Datasheet - Page 4

• Manufacturer Part Number: SPB21N10
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SPB21N10INTR

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
= f ( T
10
10
10
100
W
A
80
70
60
50
40
30
20
10
-1
0
2
1
0
10
0
SPP21N10
SPP21N10
DS
-1
C
20
)
)
40
10
0
60
80 100 120 140 160
C
= 25 °C
10
1
DC
t p = 6.8µs
10
10 µs
100 µs
1 ms
10 ms
2
T
V
°C
V
C
DS
190
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f ( T
K/W
10
10
10
10
10
10
A
24
20
18
16
14
12
10
= f ( t
-1
-2
-3
-4
8
6
4
2
0
1
0
10
0
C
SPP21N10
SPP21N10
-7
)
20
p
10
)
single pulse
GS
-6
40


10
p
60
10 V
/ T
-5
80 100 120 140 160
10
-4
10
-3
10
2005-02-14
-2
SPB21N10
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0